Investigations of the TlInP2Se6–In4(P2Se6)3 System and its Optical Properties

Valeria Tovt; Igor Barchiy; Michal Piasecki; Iwan Kityk; Anatolii Fedorchuk

doi:10.1515/hjic-2017-0014

Authors

Valeria Tovt
Igor Barchiy
Michal Piasecki
Iwan Kityk
Anatolii Fedorchuk

DOI:

https://doi.org/10.1515/hjic-2017-0014

Keywords:

phase diagram, solid solution, crystal structure, optical properties, direct-gap semiconductor, indirect-gap semiconductor, photoinduced birefringence

Abstract

The equilibrium phases were investigated and the corresponding phase diagram constructed for the TlInP2Se6–In4(P2Se6)3 system from physical and chemical analyses, namely differential thermal analysis (DTA), X-ray diffraction (XRD), and microstructural analysis (MSA). It was established that this system belongs to the eutectic type and is characterized by the formation of boundary solid phases containing complex compounds. Single crystals of the compounds TlInP2Se6 and In4(P2Se6)3 were grown using the Bridgman method. Both crystals were found to exhibit diffuse reflection spectra and photoinduced dependence of birefringence at various IR wavelengths generated by CO2 laser irradiation. Birefringence properties were investigated using the Senarmont method.

Author Biographies

Valeria Tovt

Department of Chemistry, Uzhgorod National University, Pidgirna St. 46, 88000 Uzhgorod, UKRAINE
Igor Barchiy

Department of Chemistry, Uzhgorod National University, Pidgirna St. 46, 88000 Uzhgorod, UKRAINE
Michal Piasecki

Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15, 42-200 Częstochowa, POLAND
Iwan Kityk

Faculty of Electrical Engineering, Częstochowa University of Technology, Dabrowskiego 69, 42201 Częstochowa, POLAND
Anatolii Fedorchuk

Department of Inorganic and Organic Chemistry, Lviv National University of Veterinary Medicine and Biotechnologies, Pekarska St. 50, 79010 Lviv, UKRAINE